Photoreflectance study of photovoltage effects in GaAs diode structures
نویسندگان
چکیده
منابع مشابه
Photovoltage effects in photoemission from thin GaAs layers
A set of thin GaAs p-type negative electron affinity (NEA) photocathodes have been used to measure the yield of photoemitted electrons at high intensity excitation. The active layer thickness is 100 nm and the p-type doping ranges from 5×1018 to 5×1019 cm−3 for a set of four samples. The results show that the surface escape probability is a linear function of the NEA energy. The surface photovo...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1992
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.107105